Ina 10386 Esd Sensitive

Cascadable 50 Gain Block Low Noise Figure: 2.0 dB Typical at 0.5 GHz High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz 3 dB Bandwidth: to 0.8 GHz Unconditionally Stable (k>1) Low Cost Plastic Package

Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise or RF amplification. The INA series of MMICs is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.

Parameter Device Current Power Dissipation [2,3,4] RF Input Power Junction Temperature Storage Temperature Absolute mW +13 dBm to 150°C Thermal 100°C/W INA-02186

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE 25°C. 3. Derate at 11.1 mW/°C for > 144°C for INA-02184. 4. Derate at 10 mW/°C for > 110°C for INA-02186.

f3 dB ISO VSWR tD Vd dV/dT Power Gain (|S21| 2) Gain Flatness dB Bandwidth[2] Reverse Isolation to 1.0 GHz to 1.0 GHz to 1.0 GHz = 0.5 GHz = 0.5 GHz = 0.5 GHz = 0.5 GHz dB dBm psec V mV/°C Input VSWR (Max over Freq. Range) Output VSWR (Max over Freq. Range) 50 Noise Figure Output Power 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient = 0.5 GHz to 1.0 GHz dB GHz dB

Notes: 1. The recommended operating current range for this device to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP).

Part Number INA-02186-TR1 INA-02186-BLK No. of Devices Container 7' Reel Antistatic Bag 7' Reel Antistatic Bag

Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, = 0.5 GHz, = 35 mA.

HCMS-2902 : Segment Displays High Performance CMOS 5 X 7 Alphanumeric Displays

HLMP-EL08-XZ400 : T-1 3/4 (5 Mm) Precision Optical Performance Alingap Led Lamps

LST0400 : PIN Diode Connectorized Eleds

MGA-82563 : 3V Driver Amplifier, +17dBm P1dB, Low Noise, 0.1-6GHz, SOT363(SC-70)

5082-G111-00000 : Black Surface Seven Segment Displays

5082-E108-EE000 : Low Current Seven Segment Displays

5082-5608-EF000 : 14.2 mm (0.56 Inch) Seven Segment Displays

5082-5703-GI000 : 14.2 mm (0.56 Inch) Seven Segment Displays

5082-5703-IF000 : 14.2 mm (0.56 Inch) Seven Segment Displays

5082-5723-GK000 : 14.2 mm (0.56 Inch) Seven Segment Displays

5082-A413-DC000 : Low Current Seven Segment Displays

5082-A513-HL500 : Low Current Seven Segment Displays

3A0056 : = 90° / 180° Hybrid Couplers ;; Size LXWXH = 3.0 X 1.75' X 0.5' ;; Packaging = Aluminum Cased ;; Frequency MHZ = 2000-4000 ;; Power Handling Watts = 100.

AK100-25 : Digital Attenuator. GAAS ic 4 Bit Dig Atten With Driver. Attenuation 2 dB Steps 30 dB Low DC Current Consumption 10 mA Total Integral Driver ±5 V Supply Voltages Low Cost SOIC-16 Plastic Package The an IC FET digital attenuator consisting of four monolithic attenuators with an LSB 2 dB and a total attenuation 30 dB with all attenuators connected. The device has integral drivers for each bit requiring less.

BX9129 : Frequency (MHz) = 10 - 1500 ;; Gain (Typ/Min) (dB) = 8 / 6 ;; Noise Figure (Typ/Max) (dB) = 8 / 9.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +20.5 / +19 ;; 3rd Order Intercept (Typ) (dBm) = +34 ;; 2nd Order Intercept (Typ) (dBm) = +42 ;; DC Power (Typ) (V/mA) = +15 / +95 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.

CDB7619-000 : Silicon Schottky Diode Chips. I For Detector and Mixer Applications I Low Capacitance for Usage Beyond 40 GHz I ZBD and Low Barrier Designs I P-Type and N-Type Junctions I Large Bond Pad Chip Design Alpha's product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than.

D2201UK : Purchase Online = ;; Package = DP ;; Impedance Calculator = ;; Operating Voltage (V) = 12.5 ;; Power Output (W) = 2.5 ;; Minimum Efficiency = 40 ;; Gain = 10 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 1 ;; BVDSS (V) = 40.

F2202 : Power. General Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 'Polyfet' process gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance PATENTED.

FSA1256 : Low Ron Low Voltage Dual SPST Analog Switch Maximum 1.1ohm on Resistance (RON) For 4.5V Supply 0.4ohm Max Ron Flatness For 4.5V Supply Space Saving Micropak Packaging Broad VCC Operating Range: 1.65V to 5.5V Fast Turn-on And Turn-off Time FSA1258 Break-before-make Enable Circuitry Over-voltage Tolerant TTL Compatible Control Input.

MD54-0003 : 1700-2000 Mhz, Mmic Medium Level Mixer. Low Conversion Loss +21 dBm Input Power 1 dB Compression Typical Two-Tone IM Ratio of 50 dBc LO Drive Level: to +23 dBm - 200 MHz IF Bandwidth Low Cost Plastic SOIC Package M/A-COM's is a passive mixer that achieves the performance of a double balanced diode mixer in a low cost surface mount plastic SOIC 8-lead package. The MD54-0003 is ideally suited.

PD54003L : Power. RF Power Transistors The Ldmost Plastic Family. EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT 3 W WITH 20 dB gain @ 500 MHz NEW LEADLESS PLASTIC PACKAGE ESD PROTECTION SUPPLIED IN TAPE & REEL OF 3K UNITS The is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates.

RMPA2450-58 : MMIC. Circuit = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ.

SK204 : Power. Pout W = 25 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 1.6 ;; GM Mho = 1.2 ;; Idsat a = 5.6 ;; Ciss PF = 40 ;; CRSS PF = 2.4 ;; Coss PF = 24 ;; Die = 4+4 ;; Style = Push - Pull ;; PKG = ak ;; = P ;; = a ;; = S.

SW90-0001 : DC-4 Ghz, GAAS SPST Switch, Absorptive, Single Supply. GaAs SPST Switch, Absorptive, Single Supply, - 4 GHz Operates - 4 GHz on Single Supply ASIC TTL / CMOS Driver Leadless 6 mm Chip Scale Plastic Package Low DC Power Consumption 50 Ohm Nominal Impedance Test Boards are Available Tape and Reel are Available M/A-COM's is a SPST absorptive pHEMT switch with integral TTL driver. This device in an MLP plastic.

TIM1414-2-252 : Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 13.75-14.5 ;; P1dB (dBm) = 33.0 ;; G1dB (dB) = 6.0 ;; Ids (A) = 0.85 ;; RTH ( C/W) Typ. = 5.0.

HMC-C004 : 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NF The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifi er in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifi er provides 15 dB of gain, 3 to 4 dB noise fi gure and +24 dBm of saturated output power while requiring a single.

HMC470LP3 : 5-Bit, 1 to 31dB Range, DC to 3 GHz, +/- 0.3 dB Bit Accuracy The HMC470LP3 & HMC470LP3E are broadband 5-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line per bit digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications.

HMC603MS10 : 0.7 - 3.8 GHz, 5 Bit, 0.5 to 15.5dB Attenuation Range, +50dBm Input IP3 The HMC603MS10 & HMC603MS10E are general purpose broadband 5-bit positive control GaAs IC digital attenuators in 10 lead MSOP surface mount plastic packages. Covering 0.7 to 3.8 GHz, the insertion loss is less than 2.0 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4 and 8 dB for a total.

ACA2407 : CATV Line Amplifiers, System Amplifier, Distribution Nodes The ACA2407 is a highly linear, monolithic GaAs RF amplifier that has been developed to replace, in new designs, standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the MMIC consists of two pairs of parallel amplifiers that are optimized for exceptionally low distortion.

DB-55035S-930 : RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs.

AH315 : 3.3 - 3.8 GHz WiMAX 2W Driver Amplifier * 3.3 – 3.8 GHz * 25 dB Gain * EVM .

3A0056 : = 90° / 180° Hybrid Couplers ;; Size LXWXH = 3.0 X 1.75' X 0.5' ;; Packaging = Aluminum Cased ;; Frequency MHZ = 2000-4000 ;; Power Handling Watts = 100.

AK100-25 : Digital Attenuator. GAAS ic 4 Bit Dig Atten With Driver. Attenuation 2 dB Steps 30 dB Low DC Current Consumption 10 mA Total Integral Driver ±5 V Supply Voltages Low Cost SOIC-16 Plastic Package The an IC FET digital attenuator consisting of four monolithic attenuators with an LSB 2 dB and a total attenuation 30 dB with all attenuators connected. The device has integral drivers for each bit requiring less.

BX9129 : Frequency (MHz) = 10 - 1500 ;; Gain (Typ/Min) (dB) = 8 / 6 ;; Noise Figure (Typ/Max) (dB) = 8 / 9.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +20.5 / +19 ;; 3rd Order Intercept (Typ) (dBm) = +34 ;; 2nd Order Intercept (Typ) (dBm) = +42 ;; DC Power (Typ) (V/mA) = +15 / +95 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.

CDB7619-000 : Silicon Schottky Diode Chips. I For Detector and Mixer Applications I Low Capacitance for Usage Beyond 40 GHz I ZBD and Low Barrier Designs I P-Type and N-Type Junctions I Large Bond Pad Chip Design Alpha's product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than.

D2201UK : Purchase Online = ;; Package = DP ;; Impedance Calculator = ;; Operating Voltage (V) = 12.5 ;; Power Output (W) = 2.5 ;; Minimum Efficiency = 40 ;; Gain = 10 ;; Test Frequency (MHz) = 1000 ;; Configuration = Single-ended ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 1 ;; BVDSS (V) = 40.

F2202 : Power. General Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 'Polyfet' process gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance PATENTED.

FSA1256 : Low Ron Low Voltage Dual SPST Analog Switch Maximum 1.1ohm on Resistance (RON) For 4.5V Supply 0.4ohm Max Ron Flatness For 4.5V Supply Space Saving Micropak Packaging Broad VCC Operating Range: 1.65V to 5.5V Fast Turn-on And Turn-off Time FSA1258 Break-before-make Enable Circuitry Over-voltage Tolerant TTL Compatible Control Input.

MD54-0003 : 1700-2000 Mhz, Mmic Medium Level Mixer. Low Conversion Loss +21 dBm Input Power 1 dB Compression Typical Two-Tone IM Ratio of 50 dBc LO Drive Level: to +23 dBm - 200 MHz IF Bandwidth Low Cost Plastic SOIC Package M/A-COM's is a passive mixer that achieves the performance of a double balanced diode mixer in a low cost surface mount plastic SOIC 8-lead package. The MD54-0003 is ideally suited.

PD54003L : Power. RF Power Transistors The Ldmost Plastic Family. EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT 3 W WITH 20 dB gain @ 500 MHz NEW LEADLESS PLASTIC PACKAGE ESD PROTECTION SUPPLIED IN TAPE & REEL OF 3K UNITS The is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates.

RMPA2450-58 : MMIC. Circuit = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ.

SK204 : Power. Pout W = 25 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 1.6 ;; GM Mho = 1.2 ;; Idsat a = 5.6 ;; Ciss PF = 40 ;; CRSS PF = 2.4 ;; Coss PF = 24 ;; Die = 4+4 ;; Style = Push - Pull ;; PKG = ak ;; = P ;; = a ;; = S.

SW90-0001 : DC-4 Ghz, GAAS SPST Switch, Absorptive, Single Supply. GaAs SPST Switch, Absorptive, Single Supply, - 4 GHz Operates - 4 GHz on Single Supply ASIC TTL / CMOS Driver Leadless 6 mm Chip Scale Plastic Package Low DC Power Consumption 50 Ohm Nominal Impedance Test Boards are Available Tape and Reel are Available M/A-COM's is a SPST absorptive pHEMT switch with integral TTL driver. This device in an MLP plastic.

TIM1414-2-252 : Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 13.75-14.5 ;; P1dB (dBm) = 33.0 ;; G1dB (dB) = 6.0 ;; Ids (A) = 0.85 ;; RTH ( C/W) Typ. = 5.0.

HMC-C004 : 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NF The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifi er in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifi er provides 15 dB of gain, 3 to 4 dB noise fi gure and +24 dBm of saturated output power while requiring a single.

HMC470LP3 : 5-Bit, 1 to 31dB Range, DC to 3 GHz, +/- 0.3 dB Bit Accuracy The HMC470LP3 & HMC470LP3E are broadband 5-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line per bit digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications.

HMC603MS10 : 0.7 - 3.8 GHz, 5 Bit, 0.5 to 15.5dB Attenuation Range, +50dBm Input IP3 The HMC603MS10 & HMC603MS10E are general purpose broadband 5-bit positive control GaAs IC digital attenuators in 10 lead MSOP surface mount plastic packages. Covering 0.7 to 3.8 GHz, the insertion loss is less than 2.0 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4 and 8 dB for a total.

ACA2407 : CATV Line Amplifiers, System Amplifier, Distribution Nodes The ACA2407 is a highly linear, monolithic GaAs RF amplifier that has been developed to replace, in new designs, standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the MMIC consists of two pairs of parallel amplifiers that are optimized for exceptionally low distortion.

DB-55035S-930 : RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs.

AH315 : 3.3 - 3.8 GHz WiMAX 2W Driver Amplifier * 3.3 – 3.8 GHz * 25 dB Gain * EVM .